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DMN4060SVT
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
45
?
?
?
?
?
?
100
± 100
V
nA
nA
V GS = 0V, I D = 250 μ A
V DS = 45V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1
?
?
?
?
?
37
52
4.5
0.7
3
46
62
?
1.2
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 4.3A
V GS = 4.5V, I D = 4A
V DS = 10V, I D = 4.3A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = 10V)
Total Gate Charge (V GS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
C iss
C oss
C rss
R G
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
t rr
Q rr
?
?
?
?
?
?
?
?
?
?
?
?
?
?
1287
57
44
1.2
22.4
10.4
4.9
3.0
6.6
8.1
20.1
4.0
18
11.9
?
?
?
?
?
?
?
?
?
?
?
?
?
?
pF
Ω
nC
nS
nS
nC
V DS = 25V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V DS = 30V, I D = 4.3A
V GS = 10V, V DD = 30V, R G = 6 Ω ,
I D = 4.3A
I S = 4.3A, dI/dt = 100A/ μ s
I S = 4.3A, dI/dt = 100A/ μ s
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. I AR and E AR rating are based on low frequency and duty cycles to keep T J = 25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
1
0.1
0.01
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
R θ JA(t) = r (t) * R θ JA
R θ JA = 72 ° C/W
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01 0.1 1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
DMN4060SVT
Document number: DS35702 Rev. 2 - 2
3 of 7
www.diodes.com
February 2012
? Diodes Incorporated
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